Symposium 'Quantum Informatics - 2009'
   The International Conference Micro- and nanoelectronics 2009 (ICMNE-2009) with extended Session "Quantum Informatics" will be held during October 5-9, 2009 at the holiday hotel Lipki in Zvenigorod, Moscow region, Russia.

   It continues the series of International Conferences ICMNE-2003, "QI-2004", ICMNE-2005, "QI-2005", ICMNE-2007 and "QI-2007".
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Oral Presentations |  Posters

ICMNE-2007 AND SYMPOSIUM QI-2007 SCIENTIFIC PROGRAM
(Final Edition)
(Oral Presentations)

Download files:
ICMNE-2007 Oral Presentations
ICMNE-2007 Posters
ICMNE-2007 Delayed Posters
QI-2007 Oral Presentations

Monday, October 1st , 2007
9.00 -
Registration & Accommodation
13.00 - 14.00
Lunch
Conference hall
Special Session. Presentations of Hi-Tech Companies.
16.00
S1-1
NANOFABS basic systems for new developments in the field of nanoelectronics & micro-, nanomechanics. V.A. Bykov, V.V. Kotov, V.V. Polyakov, V. Atepalikhin. NT-MDT Company, Moscow , Russia .
16.30
S1-2
The future of nano technology based on electron microscopy. Uwe Schubert. Nano Technology Systems Division Carl Zeiss SMT AG
17.00
S1-3
The inspection of SEM into the third dimension. Peter Gnauck. Nano Technology Systems Division Carl Zeiss SMT AG
17.30
S1-4
Will be announced later
18.00
Welcome Party
19.00
Dinner
Tuesday, October 2nd , 2007
Conference hall
8.00
Breakfast
8.40
Welcome remarks

E.P. Velikhov, Conference Chair, RSC Kurchatov Institute, Moscow
K.A. Valiev, Program Chair, IPT RAS, Moscow

Plenary Session
Session Chairman: Alexander Orlikovsky,
Institute of Physics &Technology RAS, Russia
8.50
L1-01
KEYNOTE: Materials and MOS device architectures for the sub-32 nm node. Th. Skotnicki and S. Monfray. ST Microelectronics, Crolles , France
9.30
L1-02
INVITED: High-k dielectric films for advanced microelectronics. A. Toriumi. University of Tokyo , Japan
10.10
L1-03
INVITED: Low-k dielectrics for microelectronics. M. Baklanov . IMEC, Leuven , Belgium .
10.40
L1-04
INVITED: Bottom-up interconnect formation possibility using supercritical fluids: beyond scalability. E.   Kondoh. University of Yamanashi, Japan.
11.10
L1-05
INVITED: Physics and Applications of Graphene. K.S. Novoselov 1 , S.V. Morozov 2 , A.K. Geim. 1. School of Physics and Astronomy, University of Manchester , Manchester , UK 2. Institute for Microelectronics Technology, Chernogolovka , Russia
11.40 - 12.00
Coffee break. Winter garden
Conference Hall
Session 1. Sub-100 nm Lithography
Session Chairman: Kamil Valiev,
Institute of Physics &Technology RAS, Russia
12.00
O1-01
Manufacturing and investigation of objective lens for ultrahigh resolution lithography facilities. N. Chkhalo, E. Kluenkov, A. Pestov, D. Raskin, N. Salashchenko. Institute for Physics of Microstructures, RAS, Nizhny Novgorod , Russia
12.20
O1-02
Multilayer Zr/Si filters for EUV lithography and for radiation source metrology. M.S. Bibishkin 1 , N.I. Chkhalo 1 , S.A.  Gusev 1 , E.B. Kluenkov 1 , A.Ja. Lopatin 1 , V.I. Luchin 1 , A.E. Pestov 1 , N.N. Salashchenko 1 , L.A.  Shmaenok 2 , N.N. Tsybin 1 . 1.  Institute for Physics of Microstructures, RAS, Nizhny Novgorod , Russia . 2.   PhysTeX, Vaals , Netherlands
12.40
O1-03
Alternating Phase Shift Mask design problem statement. M. Myachin 1 , N. Savinski 2 , G. Krasnikov , 3 N. Shelepin 3 , O. Gutshin 3 , I.  Sirtsov 3 , A. Sutyagin 3 . 1.  Yaroslavl State University , Yaroslavl , Russia 2.   Institute of Physics &Technology, RAS, Yaroslavl Branch , Russia , 3. JSC Mikron , Zelenograd, Moscow
13.00
O1-04
Modification of nanolithography method using optical tweezers for planar nanostructures fabrication. I.V. Soboleva, A.G. Zhdanov, A.A. Fedyanin. Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia
Auditorium A
Session 2. Simulation and Modeling I
Session Chairman: Tariel Makhviladze,
Institute of Physics &Technology RAS, Russia
12.00
L1-06
INVITED: New Results of Modeling in Micro- and Nanoelectronics. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 2 . 1. Institute for Problems in Mechanics, RAS, Moscow , Russia . 2.  Institute of Physics and Technology, RAS, Moscow , Russia
12.30
O1-05
The process window TCAD methodology for DFM in the field of deep submicron nodes and nanoscale transistors. Y. Chaplygin, M. Korolev, T. Krupkina. Moscow Institute of Electronic Engineering, Moscow , Russia
12.50
O1-06
The TCAD estimation of electrical stability for different layout SOI MOSFETs. T. Krupkina. Moscow Institute of Electronic Engineering, Moscow , Russia
13.10
O1-07
Technology modelling of microsystem technics devices. A. Kozlov, D. Rodionov. Moscow Institute of Electronic Technology, Moscow , Zelenograd , Russia
Auditorium B
Session 3. Defects and Impurities in Semiconductors
Session Chairman: Eugene Yakimov,
Institute of Microelectronics Technology , Russia
12.00
O1-08
Spatial distribution of electrically active defects in strained-Si / SiGe / Si heterostructures. N. Yarykin 1 , E. Yakimov 1 , G. Rozgonyi 2 . 1.  Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia . 2. Department of Materials Science and Engineering, North Carolina State University , Raleigh , NC , USA
12.20
O1-09
Stable silicon resistors at 20-160 C due to divacancy involving in high purity neutron doped Si. G.N. Kamaev, M.D. Efremov, V.A. Stuchinsky, B.I. Mihailov, S.G. Kurkin. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia
12.40
O1-10
Application of SQUID for detection of a small quantity of spin impurity in semiconductors. A.I.   Golovashkin 1 , A.L.   Karuzskiy 1 , A.A.   Orlikovsky 2 , V.V.   Privezentsev 2 , A.M.   Tshovrebov 1 . 1. Lebedev Physical Institute, Russian Academy of Science , Moscow , Russia ; 2. Institute of Physics & Technology, Russian Academy of Science , Moscow , Russia
13.00
O1-11
Determination of isotope ratio of boron in B-alloyed crystals of diamond by SIMS. A.N. Pustovit 1 , E.A. Ekimov 2 , I.I. Vlasov 3 , A.F. Vyatkin 1 . 1.  Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia . 2.  Vereshchagin Institute for High Pressure Physics, RAS, Troitsk, Moscow region, Russia . 3.  General Physics Institute, RAS, Moscow , Russia
13.30 - 14.30
Lunch
Conference Hall
Session 4. Nanodevices and Nanostructures I
Session Chairman: Oleg Pchelyakov, Institute of Semiconductor Physics SB RAS, Russia
14.30
O1-12
From molecularly to atomically thin solid nanoshells: fabrication, properties and applications. V.Ya. Prinz, V.A. Seleznev, S.V. Golod. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
14.50
O1-13
Fabrication of nanostructures for stamps production used in nanoimprint lithography by means of focused ion beam technique. A.F. Vyatkin 1 , Yu.   A. Agafonov 1 , V.I. Zinenko 1 , Yu. M. Lunin 1 , B.G. Freikman 1 , V.I. Balykin 2 , P.N. Melent'ev 2 . 1. Institute of Microelectronics Technology, RAS, Moscow district, Chernogolovka, Russia . 2. .Institute of spectroscopy, RAS, Moscow district, Troitsk
15.10
O1-14
Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band kp Model: Conduction Band of Silicon. V. Sverdlov 1,2 , H. Kosina 1 , and S. Selberherr 1 . 1. Institute for Microelectronics, TU Wien, Wien , Austria . 2. V.A. Fock Institute of Physics, State University of St.Petersburg , St.Petersburg , Russia
15.30
O1-15
Graphene Nanoelectronics: Device Electrostatics and Kinetics. G. I. Zebrev. Department of Microelectronics, Moscow Engineering Physics Institute, Russia
15.50
O1-16
Quantum Conductivity of Linear Chain Carbon. M.B. Guseva, V.G.  Babaev , N.D.  Novikov, V.V. Khvostov. Department of Physics, Moscow State University , Moscow , Russia
Auditorium A
Session 5. MEMS & Sensors
Session Chairman: Vladimir Lukichev,
Institute of Physics &Technology RAS, Russia
14.30
O1-17
Divergence Instability o f a Extensible Microplate Subjected to Nonlinear Electrostatic Pressure. Gh.   Rezazadeh 1 , H.   Yagubizade 1 , Y.   Alizadeh 2 . 1. Mech. Eng. Dept., Urmia University , Urmia , Iran . 2. Mech. Eng. Dept., Arak Azad University , Arak , Iran
14.50
O1-18
Simulation, formation and dynamic characteristics of e lectrostatically actuated switches . A.V.   Postnikov 1 , I.I.   Amirov 1 , V.V.   Naumov 1 , V.A.   Kalnov 2 . 1. Institute of microelectronics, Russian Academy of Science, Yaroslavl, Russia 2. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
15.10
O1-19
High energy microelecromechanical oscillator based on the electrostatic microactuator. I. Baginsky, E. Kostsov , V. Sobolev. Institute of Automation and Electrometry, SB RAS, Novosibirsk , Russia
15.30
O1-20
Application of single crystals of lithium niobate with bidomain structure for creation actuators of micro and nano moving ranges. V.Antipov, A.Bykov, M.Malinkovich 1 , Y.Parkhomenko. Moscow Institute Of Steel And Alloys (Technological University), Moscow , Russia
15.50
O1-21
Electromechanical energy conversion in the nanometer gaps. E.G.   Kostsov. Institute of Automation and Electrometry, SB RAS, Novosibirsk , Russia
16.10
O1-22

Flicker-noise gas sensors as basis elements of microanalytical systems. M. Makoviychuk. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia

Auditorium B
Session 6. Photonics and Optoelectronics
Session Chairman: Sergey Nikitov,
Institute of Radioengineering and Electronics RAS, Russia
14.30
O1-23
Distant- and interference-spatial spectroscopy of evanescent waves . M.Yu. Barabanenkov*, Yu.N.  Barabanenkov , S.A.  Nikitov. * Institute of Microelectronics Technology, RAS, Chernogolovka , Russia . Institute of Radioengineering and Electronics, RAS, Moscow , Russia
14.50
O1-24
Polarization switching dynamics of nonlinear ferroelectric photonic crystals. N.E. Sherstyuk 1 , E.D. Mishina 1 , V.M. Muhortov 2 . 1. Moscow State Institute of Radioenginering, Electronics and Automation, Moscow , Russia ; 2. South Scientific Center of Russian Academy of Science , Rostov-on-Don , Russia
15.10
O1-25
Magnetoplasmonic effects in two-dimensional photonic crystals. A.G. Zhdanov 1 , T.V. Dolgova 1 , A.A. Fedyanin 1 , A.V. Baryshev 2 , A.B. Khanikaev 2 , H. Uchida 2 , and M. Inoue 2 . 1.  Dept. of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia 2. Dept. of Electrical and Electronic Eng. , Toyohashi University of Technology , Toyohashi , Japan
15.30
O1-26
Application of Ge- Si Nanostructures in Photovoltaic. O.P. Pchelyakov. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia
15.50
O1-27
Red Channel Frequency-Contrast Characteristics Correction Method of the Matrix Photoreceiver Based on Simplified Design of the Photocells with Deep Color Separation. I.V. Vanyushin 2 , A.V. Verhovtseva 2 , A.V. Gergel' 1 , N.M. Gorshkova 1 , V.A. Zimoglyad 2 , Yu.I. Tishin 2 . 1.  Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia . 2.   Unique IC`s, LLC, Moscow, Russia
16.10
O1-28
SILAR Preparation of Charge Selective Contacts for Future Photovoltaics. S. Gavrilov 1 , A. Zheleznyakova 1 , Th. Dittrich 2 , E. Poltoratsky 3 , A. Belogorokhov 4 1. Moscow Institute of Electronic Technology, Moscow , Russia , 2. Hahn-Meitner Institut , Berlin , Germany , 3. State Research Institute of Physical Problems, Moscow , Russia , 4. Institute of Rare Metals, Moscow , Russia
16.30 - 17.00
Coffee break. Winter garden
Conference Hall
Session 7. Devices and ICs
Session Chairman: Andrey Vasiliev,
FSU Enterprise Pulsar, Russia
17.00
O1-29
Physical Limitations of Reliability of Solid-State Microwave Elements at Micro- and Nanoelectronics. A. Vasiliev, V. Sinkevitch. Federal State Unitary Enterprise Scientific & Product Enterprise Pulsar, Moscow , Russia
17.20
O1-30
Sign magnetosensitivity of dual-collector lateral bipolar magnetotransistor. R.D. T ikhonov. SMC "Technological Centre" MIEE, Moscow - Zelenograd , Russia
17.40
O1-31
High speed integrated switchboards based on connected quantum wells. B. Konoplev 1,2 , E. Ryndin 2 . 1. Taganrog Institute of Technology - Southern Federal University , Taganrog , Russia . 2. Southern Scientific Center of Russian Academy of Sciences , Rostov-on-Don , Russia
18.00
O1-32
Self-heating influence on device interconnect temperature in high-voltage SOI MOSFET. . Krasukov, E. Artamonova. Moscow State Insitute of Electronic Engineering, Moscow , Russia
18.20
O1-33
Microwave GaN Transistors: Achievements and Prospects. A. Vasiliev, A. Dorofeev, Yu. Kolkovsky, V. Minnebaev. Federal State Unitary Enterprise Scientific & Product Enterprise Pulsar, Moscow , Russia
18.40
O1-34
Nanoionic supercapacitors for 0.5 V nanoelectronics. A.L. Despotuli, A.V. Andreeva, V.V. Aristov. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
Auditorium A
Session 8. Thin Films
Session Chairman: Mikhail Baklanov,
IMEC, Leuven , Belgium
17.00
O1-35
Electric Pulse Induced Resistance Change in Oxide Thin Film Heterostructures. A. Ignatiev, N.J. Wu , X. Chen, C. Papagianni, Y. B. Nian, J. Strozier. Texas Center for Advanced Materials, University of Houston , Houston , USA
17.20
O1-36
MBE growth of Ge-Si strained structures with the step buffer for two-dimensional electron gas. L.V. Sokolov, Yu.B. Bolkhovitianov, and A.S. Derjabin. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
17.40
O1-37
Development of MBE technology of III-V semiconductor heterostructures for ultra-high frequency devices. K. Zhuravlev, A. Toropov, V. Mansurov. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
18.00
O1-38
Surprising phase transformation of a-Si:H films under femtosecond laser impact. V.A. Volodin 1,2 , M.D. Efremov 1 , G.A. Kachurin 1 , S.A.  Kochubei 1 , A.G. Cherkov 1 , M. Deutschmann 3 , N. Baersch 3 . 1 .  Institute of Semiconductor P hysics SB RAS , Novosibirsk , Russi a . 2 .  Novosibirsk State University , Novosibirsk , Russia . 3. Laser Zentrum Hannover, Hannover, Germany
18.20
O1-39
Deposition of ultrathin magnetic films by magnetron sputtering with RF bias on substrate. V.V. Naumov, V.F. Bochkarev, Ed.Yu. Buchin. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
18.40
O1-40
Emitting prop er ties of cobalt thin films reduced from oxide by proton irradiation. B. Gurovich, K. Prikhodko , A. Domantovsky, K. Maslakov. Russian Research Center "Kurchatov Institute", Moscow , Russia
Auditorium B
Session 9. Superconducting Structures
Session Chairman: Mikhail Kupriyanov,
Institute of Nuclear Physics , Moscow State University , Russia
17.00
O1-41
Josephson effect in laterally inhomogeneous structures with ferromagnetic materials. T. Karminskaya 1 , M. Kupriyanov 1 , N.Pugach 2 . Institute of Nuclear Physics , Moscow State University , Moscow , Russia . 2. Physics Department of Moscow State University , Moscow , Russia
17.20
O1-42
Ferromagnetic nanodots as source of magnetic field: control transport properties of Josephson junctions and diluted magnetic semiconductor. S.N. Vdovichev. Institute for Physics of Microstructures, RAS, Nizhniy Novgorod , Russia
17.40
O1-43
High Linearity Josephson Array Structures. V.K. Kornev 1 , I.I. Soloviev 1 , N.V. Klenov 1 , and O. A. Mukhanov 2 . 1. Department of Physics, M.V.   Moscow State University , Moscow , Russia . 2. HYPRES, Inc., Elmsford , NY , USA
18.00
O1-44
Full synchronization of arrays of high-Tc Josephson junctions. A.M. Klushin 1,2 , M. He 1,3 , M.Yu. Levitchev 2 , V.A. Markelov 2 , V.V. Kurin 2 and N. Klein 1 . 1. Institute for Bio- and Nanosystems and CNI-Centre of Nanoelectronic Systems for Information Technology Forschungszentrum Julich GmbH, Julich , Germany . 2. Institure for physics of microstructures, RAS, Nizhny Novgorod, Russia . 3 Dept. of Electronics, Nankai Univ. , Tianjin , P. R. China
18.20
O1-45
Fluctuations of the thin diffusive metal film under the influence of microwave radiation. I. Devyatov, M. Kupriyanov, D. Goncharov. Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow , Russia
18.40
O1-46
Out-of-plane tilted Josephson junctions of bi-epitaxial YBa 2 Cu 3 O x thin films. J.E. Mozhaeva 1 , P.B. Mozhaev 1 , J. Bindslev Hansen 2 , C.S. Jacobsen 2 , I.K. Bdikin 3 ,
I.M. Kotelyanskii 4 , V.A. Luzanov 4 , S.G. Zybtsev 4 .
1.   Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia . 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark . 3.  CICECO, University of Aveiro , Aveiro , Portugal . 4.  Institute of Radio Engineering
and Electronics, Russian Academy of Sciences , Moscow , Russia
19.00
Dinner
Wednesday, October 3rd 2007
8.15
Breakfast
8.50
Welcome remarks

K.A. Valiev. Institute of Physics and Technology, Russian Academy of Sciences.

Conference Hall
Plenary Session of SYMPOSIUM QI-2007
Chairman: Y. Ozhigov
9.00
Q-01
Coulomb blockade of anyons in quantum antidots. D.V.Averin. Department of Physics and Astronomy, Stony Brook University, SUNY, Stony Brook, NY, USA
9.30
Q-02
Reversible logic circuits as prototypes of prospective quantum computers, V. Semenov, J. Ren and D. Averin, Stony Brook University, Department of Physics and Astronomy, Stony Brook, NY
10.00
Q-03
Single-qubit operations in the double-donor structure driven by optical and voltage pulses . A. V. Tsukanov . Institute of Physics and Technology, Russian Academy of Sciences
10.30
Coffee break
Conference Hall
Session 10. Nanodevices and Nanostructures II
Session Chairman: Alex Ignatiev,
Texas Center for Advanced Materials, University of Houston , USA
10.50
L2-01
INVITED: New Trends in Development of Modern Silicon Nanoelectronics. I.G. Neizvestny. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
11.10
O2-01
SiGe heterostructures on insulator for CMOS transistors formed by interface mediated endotaxy. V.P. Popov 1 , I.E. Tyschenko 1 , A.G. Cherkov 1 , A.E. Klimov 1 , M. Volskow 2 . 1.  Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 2 Institute of Ion Beam Physics and Material Research, Dresden , Germany
11.30
O2-02
Interacting resonances and electron density redistribution in resonant- tunneling heterostructures. A. A. Gorbatsevich 1 , V. V. Kapaev 2 , M. N. Zhuravlev 1 . 1. Moscow State Institute of Electronic Technology ( Technical University ), Moscow , Russia . 2. P.N. Lebedev Physical Institute, Moscow , Russia
11.50
O2-03
Memory Effect in Dielectrics with Inc orporated Nanosize Clusters. A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick. Institute of Physics &Technology RAS, Yaroslavl Branch , Russia
12.10
O2-04
Work function engineering of Ni-Si metal gates on HfO 2 high-? gate dielectrics as probed with in-situ XPS. A.V. Zenkevich, Yu.Yu. Lebedinskii, Yu.A. Matveev and V.N. Nevolin. Moscow Engineering Physics Institute (state university), Russia
12.30
O2-05
Using heterostructures for nanoscaled electronic devices in Novosibirsk Institute of Semiconductor Physics. V.P. Popov, I.E. Tyschenko, A.V. Latyshev, V.A. Gaisler, I.G. Neizvestny, A.L. Aseev. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
Auditorium A
SYMPOSIUM QI-2007
Chairman: A. Tsukanov
11.00
Q-04
Non-demolishing measurements of an electron spin state via Fano resonance . L. Gorelik 1 , V. Vyurkov 2 , and A. Orlikovsky 2 1. Chalmers University of Technology and Goteborg University, Goteborg, Sweden, 2. Institute of Physics and Technology, RAS, Moscow, Russia
11.20
Q-05
Relative coordinates of coherent electron pair. C. Usenko 1 , N. Cherkashyna 1 . National Taras Shevchenko University of Kyiv, Kyiv, Ukraine
11.40
Q-06
The Software for Quantum Mechanical Calculation of Electronic Structure of Molecules. A.G. Gasanov 1 , F.G. Pashaev 1 . 1. Baku State University, Baku, Azerbaijan
12.00
Q-07
Josephson-junction qubits . N.V. Klenov, V.K. Kornev, N. G. Pugach, T.S. Rumyantseva. Department of Physics, Moscow State University, Moscow, Russia
12.20
Q-08
Simulation of Quantum Algorithms with high-level language. Mathematica. P.Nyman . International Center for mathematical Modeling in physics, Engineering and Cognitive science, MSI, Vaxjo University, Sweden
12.40
Q-09
Geometric information in eight dimensions vs. quantum information. V.I. Tarkhanov 1 , M.M. Nesterov 2 . 1. St. Petersburg State Polytechnic University, St. Petersburg, Russia. 2. St. Petersburg Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia
Auditorium B
Session 11. Magnetic Micro- and Nanostructures
Session Chairman: Mikhail Chuev,
Institute of Physics &Technology RAS, Russia
11.00
O2-06
Non-equilibrium magnetism of nanoparticles revealed in static' and radiofrequency measurements. M.A. Chuev, N.P. Aksenova, P.G.   Medvedev. Institute of Physics and Technology, RAS, Moscow , Russia
11.20
O2-07
Peculiarities of the extraordinary Hall effect for planar arrays Fe nanoparticles embedded in an ultrathin Pt film. V.T. Volkov, V. I. Levashov, V. N. Matveev and V. A. Berezin. Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia
11.40
O2-08
Inhomogeneously magnetization of magnonic ferrite film measurement using magnetooptical Kerr effect. A. Klimov, S. Nikitov. Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia
12.00
O2-09
Finite size effects in antiferromagnetic multilayers. V.V. Kostyuchenko 1 , M.V. Kostyuchenko 2 . 1.  Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia 2.  Yaroslavl State Technical University , Yaroslavl , Russia
12.20
O2-10
Magnetoresistance of ferromagnetic nanoconstrictions in planar configuration. A.A. Bukharaev 1,2 , R.G. Gatiyatov 1 , P.A. Borodin 1 . 1.  Zavoisky Physical Technical Institute, Russian Academy of Sciences , Kazan , Russia . 2.  Kazan State University , Kazan , Russia
12.40
O2-11
Spin-flop effect in antiferromagnets induced by the spin-polarised current. H. Gomonay, V. Loktev. National Technical University "KPI", Kyiv, Ukraine
13.00
Lunch
Conference Hall
Session 12. Plasma Physics and Technologies I
Session Chairman: Dorel Toma,
Tokyo Electron  U.S. Holding
14.00
L2-02
INVITED: Dual (multi-) frequency capacitive coupled plasma (DF CCP) as an effective tool for nanotechnology. A.T. Rakhimov. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University (SINP MSU), Moscow , Russia
14.30
O2-12
A plasma etch process for bulk finFET manufacturing. D. Shamiryan, A. Redolfi, W. Boullart. IMEC, Leuven , Belgium
14.50
O2-13
Nanoscale etching processes. A. Rubin, C. Welch. Oxford Instruments Plasma Technology, Bristol , UK
15.10
O2-14
Plasma parameters and active particles kinetics in Cl 2 and HCl dc glow discharges. A. Efremov , V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo , Russia
15.30
O2-15
Theoretical study of ionization processes in BF 3 plasmas. V.P. Kudrya. Institute of Physics and Technology, RAS, Moscow , Russia
15.50
O2-16
Investigation of plasma uniformity in processing chambers of plasma tools for microelectronics by computer-aided tomography. K. Rudenko , A. Fadeev, S. Averkin, M. Rudenko, I.  Tyurin, A. Rylov, and A. Orlikovsky. Institute of Physics and Technology, RAS, Moscow , Russia
Auditorium A
SYMPOSIUM QI-2007
Chairman: Y.Bogdanov
14.00
Q-10
Diffusion approximation of quantum dynamics. Y.I. Ozhigov . Moscow State University, Moscow, Russia
14.30
Q-11
Numerical computations of molecular stationary states. B.K. Novosadov . Moscow State University
14.50
Q-12
What Fundamentally New Properties Are Introduced by Special Relativity to Quantum Cryptography , D.Pomozov, S.Molotkov , Institute of physics and technology RAS
15.10
Q-13
EPR - experiments: analysis of Bell inequalities violation A. Kraklauer, New York, USA
15.30
Q-14
An investigation of the antiferromagnet-based NMR quantum register in inhomogeneous magnetic field , A. Kokin. Institute of Physics and Technology, RAS
15.50
Q-15
Will be announced later
Auditorium B
Session 13. Simulation and Modeling II
Session Chairman: Tariel Makhviladze,
Institute of Physics &Technology RAS, Russia
14.00
O2-17
Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths . A. Burenkov, C. Kampen, J. Lorenz, and H. Ryssel. Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen , Germany
14.20
O2-18
All-quantum simulation of an ultra-small SOI MOSFET. V. Vyurkov 1 , I.  Semenikhin 1 , V. Lukichev 1 , A. Burenkov 2 , and A. Orlikovsky 1 . 1.  Institute of Physics and Technology, RAS, Moscow , Russia . 2.  Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen , Germany
14.40
O2-19
Modeling of non-stationary electron transport in semiconductor nanowires and carbon nanotubes. D.V. Pozdnyakov, A.V. Borzdov, V.M. Borzdov, F.F. Komarov. Belarus State University , Minsk , Belarus
15.00
O2-20
Simulation of metal and semiconductor single-electron 1D and 2D arrays. I.I. Abramov, A.L. Baranoff, A.M. Lavrinovich. Belarusian State University of Informatics and Radioelectronics, Minsk , Belarus
15.20
O2-21
Mathematical modeling of a GaAs integrated microwave limiter. G.Z. Garber. Federal State Unitary Enterprise Scientific & Product Enterprise Pulsar, Moscow , Russia
15.40
O2-22
A Comparison of Fitness Function Schedules for Multi-Objective Univariate Marginal Distribution Optimization of Mixed Analog-Digital Signal Circuits. L. Zinchenko , M. Radecker , F. Bisogno. Fraunhofer IAIS, Sankt Augustin, Germany
16.10
Coffee break
16.30 Entresol
POSTER SESSION I
Bottom hall.
Exhibition
19.00
Dinner
Thursday, October 4th 2007
8.15
Breakfast
Conference Hall
Session 14. Nanostructures Technologies I
Session Chairman: Anatoly Dvurechenskii,
Institute of Semiconductor Physics SB RAS, Russia
9.00
L3-01
INVITED: Silicon based quantum dot nanostructures: Physics and Technology. A.V. Dvurechenskii. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
9.30
O3-01
Method of creation of monomolecular transistor with overhanging electrodes. I.V. Sapkov, E.S. Soldatov. Department of Physics, M.V. Lomonosov Moscow State University , Russia
9.50
O3-02
Nanocrystal floating gate produced by CVD and thermal processing. A.G. Novikau 1 , P.I. Gaiduk 1 , E.N. Pshenichnij 2 , O.Yu. Nalivajko 2 , V.S. Malishev 2 and V.I. Plebanovich 2 . 1 .  Belarusian State University , Minsk , Belarus , 2 .  RPC Integral, Minsk , Belarus
10.10
O3-03
The electroformed open sandwich-structures as elements for crossbar-nanoelectronics. V. Mordvintsev, S. Kudryavtsev V. Levin . Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia
10.30
O3-04
Nanotechnology for fabricating full-epitaxial Nb-MgO-Nb tunnel junctions of sub-micron sizes. A. Chernych, G. Mikhailov, V. Vinnichenko. Institute of Microelectronics Technology & High Purity Materials, Russian Academy of Sciences , Chernogolovka, Moscow Region , Russia
Auditorium A
SYMPOSIUM QI-2007
Chairman: B. Novosadov
9.00
Q-16
Quantum computation and hidden variables. V.V. Aristov and A.V. Nikulov, Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
9.20
Q-17
Generation of entangled states in quasi-periodical ferroelectrics, S. Kulik. Moscow State University, Moscow, Russia
9.40
Q-18
Limitations on ion trap quantum computing scheme . A. Burkov. Moscow State University, Moscow, Russia
10.00
Q-19
Has it been proved that a superconducting loop could be flux qubit? A.A. Burlakov, V.L. Gurtovoi, A.V. Nikulov and V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
10.20
Q-20

Thermal entanglement in a case of two spin temperatures , M. Kutcherov Polytechnic Institute of Siberian Federal University

10.40
Q-21
Will be announced later
Auditorium B
Session 15. Simulation and Modeling III
Session Chairman: Igor Abramov, Belarusian State University of Informatics and Radioelectronics , Belarus
9.00
L3-02
INVITED: Focused ion beam source of a new type for micro- and nanoelectronics technologies. V.L. Varentsov. V.G.Khlopin Radium Institute, St. Petersburg , Russia
9.30
O3-05
New Approach in the Development of Low Noise Microwave Semiconductor Devices. N.V. Alkeev 1 , S.V. Averin 1 , V.E. Lyubchenko 1 , A.A. Dorofeev 2 . 1.  Institute of Radioengineering & Electronics, RAS , Fryazino, Moscow region, Russia . 2.  Federal State Unitary Enterprise Scientific & Product Enterprise Pulsar, Moscow , Russia
9.50
O3-06
Two-band models of wave function formalism f r resonant tunneling diodes. I.I. Abramov, I.A. Goncharenko, N.V. Kolomejtseva, A.A. Shilov. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
10.10
O3-07
The prediction of nanostructure properties on the base of porous silicon. D. Bilenko, O. Belobrovaya, E. Jarkova, E. Khasina, I. Mysenko, D. Terin. Saratov State University , Saratov , Russia
10.30
O3-08
Simulation of feature profile evolution during the cyclic etching/ passivation process of deep plasma Si etching by the cell-string hybrid method. A.S. Shumilov, I.I. Amirov. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
11.00
Coffee break
Conference Hall
Session 16. Nanostructures Technologies II
Session Chairman: Vitalii Aristov,
Institute of Microelectronics Technology RAS, Russia
11.30
O3-09
Influence of growth temperature and double-side doping on structural and electro-physical characteristics of the Al x Ga 1-x As/In y Ga 1-x As/GaAs nanosystem. I.A. Subbotin * , G.B. Galiev ** , R.M. Imamov * , M.A. Chuev *** . * Shubnikov Institute of Crystallography, RAS, Moscow , Russia . ** Institute of Ultra-High-Frequency Semiconductor Electronics, RAS, Moscow , Russia . *** Institute of Physics and Technology, RAS, Moscow , Russia
11.50
O3-10
Model of diffusion limited aggregation for the effect of magnetic field on ion beam synthesis. G.G. Gumarov, V. Yu. Petukhov. Kazan Physical Technical Institute of Kazan Scientific Center, RAS, Kazan , Russia
12.10
O3-11
Heterogeneous melting and participation of it in different micro- and nanotechnology processes. A.A. Buzdugan, S.A. Gavrilov, D.G. Gromov, E.N. Redichev, I.S. Chulkov. Moscow Institute of Electronic Technology, Zelenograd , Russia
12.30
O3-12
Porous silicon the material for nano- and microstructurizations. V. Starkov. Institute of Microelectronics Tecnology, RAS, Chernogolovka , Russia
12.50
O3-13
The approach to formation of interconnections with the low dimension for damascene technology. D.G. Gromov a , E.N .Redichev a , A.A. Golishnikov b , A.A. Buzdugan a , I.S. Chulkov a , R.M. Ammosov c . a Moscow Institute of Electronic Technology ( Technical University ), Moscow , Zelenograd , Russia . b Technological Center Research and Production Complex at MIET, Moscow , Zelenograd , Russia . c State Research Institute of Physical Problems, Moscow, Zelenograd, Russia
Auditorium A
SYMPOSIUM QI-2007
Chairman: A. Burkov
11.30
Q-22
Explicit Attack on the Key in Quantum Cryptography) Reaching the Theoretical Error Limit 11%, A.Timofeev, S.Molotkov, Moscow State University
11.50
Q-23
Hidden variables in Bell model and dynamical chaos, Y.Bogdanov , Institute of physics and technology, Moscow, Russia
12.10
Q-24
New Time-Phase Coding Method in Quantum Cryptography , A.Makkaveev, S.P.Kulik , S.Molotkov , Institute of physics and technology
12.30
Q-25
3D-vortex labyrinth trapping in the near field of a solid-state microchip laser. A.Yu. Okulov . P.N.Lebedev Physical Institute of Russian Academy of Sciences Leninsky prospect 53, 119991 Moscow, Russia
12.50
Q-26
Hidden time hypothesis and no - protocol theorem. P.V. Kurakin. Moscow Institute of Physics and Technology, Moscow, Russia
Auditorium B
Session 17. Micro- and Nanostructures Characterization I
Session Chairman: Mikhail Chuev,
Institute of Physics &Technology RAS, Russia
11.30
O3-14
Nanorelief elements in reference measures for scanning electron microscopy. S.A.  Darznek 1 , M.N. Filippov 2 , V.B. Mityukhlyaev 1 , Yu.A. Novikov 3 , Yu.V. Ozerin 4 , A.V. Rakov 3 , P.A. Todua 1 . 1. Center for Surface and Vacuum Research, Moscow , Russia . 2. N.S. Kurnakov General and Inorganic Chemistry Institute, RAS , Moscow , Russia . 3. A.M. Prokhorov General Physics Institute, RAS , Moscow , Russia . 4. Mikron Corporation, Moscow , Russia
11.50
O3-15
Direct measurement of the linewidth of relief element on AFM in nanometer range. S.A. Darznek 1 , M.N. Filippov 2 , I.D. Lysov 1 , Yu.A. Novikov 3 , A.V. Rakov 3 , V.A. Sharonov 1 , P.A. Todua 1 . 1. Center for Surface and Vacuum Research, Moscow , Russia . 2. N.S. Kurnakov General and Inorganic Chemistry Institute, RAS , Moscow , Russia . 3. A.M. Prokhorov General Physics Institute, RAS , Moscow , Russia
12.10
O3-16
Generalized dynamical theory of X-rays diffraction by curved perfect crystals. T. Chen. Moscow State Academy of Fine Chemical Technology, Moscow , Russia
12.30
O3-17
The special features of Al x Ga 1-x N \ GaN heterostructures. K.L. Enisherlova 1 , R.M. Imamov 2 , I.A. Subbotin 2 , T.F. Rusak 1 , E.M. Temper 1 . 1. Federal state unitary enterprise Science &Production enterprise Pulsar, Moscow , Russia 2.  Institute of Crystallography RAS, Moscow , Russia
12.50
O3-18
Characterization of Nanometer Structures for CMOS VLSIC Design Flow. D.Y. Adamov, Y.F. Adamov. LCC Unique IC`s, Moscow Russia
13.10
O3-19
Fundamental and applied aspects of flicker-noise spectroscopy. M. Makoviychuk. Institute of Physics and Technology of the RAS, Yaroslavl Branch, Yaroslavl , Russia
13.30
Lunch
Conference Hall
Session 18. Plasma Physics and Technologies II
Session Chairman: Dorel Toma,
Tokyo Electron  U.S. Holding
14.20
L3-03
INVITED: Plasma etching of high aspect ratio structures: from complex chemistry to Bosh processing. V. Lukichev 1 , V. Yunkin 2 . 1.  Institute of Physics and Technology, RAS, Moscow , Russia . 2.  Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia
14.50
O3-20
Plasma Si etching processes for microsystem technology. I.I. Amirov1, O.V. Morozov1, M.O. Izuimov1, B.A. Kalnov2, A.A. Orlikovsky2, K.A. Valiev2. 1. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia
15.10
O3-21
Dry processes for formation of suspended Si bulk structures. O. V. Morozov 1 , A.V. Postnikov 1 , I.I. Amirov 1 , V.A. Kalnov 2 . 1.  Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia . 2.Institute of Physics and Technology RAS, Moscow , Russia .
15.30
O3-22
Reactive sputtering of metal targets: influence of reactive atoms implantation. V.A. Marchenko. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
15.50
O3-23
Investigation of impurity composition of atomic hydrogen beam formed by a low-pressure arc-discharge source. V.A. Kagadei , D.I. Proskurovski, and S.V. Romanenko. High Current Electronics Institute, SB RAS, Tomsk , Russia
16.10
O3-24
Langmuir-Probe applications in monitoring of plasma etching. A.V. Miakonkikh , K.V. Rudenko and A.A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
Auditorium A
SYMPOSIUM QI-2007
14.20
Q-27
Problem of detection of Rydberg atoms and quantum information processing, I.Riabtsev, D.Tretiakov, I.Beterov, V.Entin, Institute semiconductor physics, Siberian Dep.RAS
14.40
Q-28
Quantum registers on the basis of inhomogeneous chains of nuclear spins, E. B. Fel'dman, Institute of Problems of Chemical Physics of RAS
15.00
Q-29
Thermal pairwise entanglement in an inhomogeneous magnetic field , E. B. Fel'dman, A. N. Pyrkov, Institute of Problems of Chemical Physics of RAS, 142432, Chernogolovka, Moscow
15.20
Q-30
Single molecule implantation as alternative of single atom (ion) implantation for Quantum Computer development , V. Zhukov, V. Maslov, Inst. of informatics nd automation, RAS
15.40
Q-31

Prequantum model with classical fields as hidden variables. A. Khrennikov. Univ. Vaxjo, Sweden

16.00
Q-32

Fair Sampling and Rotational Invariance in EPR experiments, G. Adenier, A. Khrennikov, Vaxjo University

16.20
Q-33
Will be announced later
Auditorium B
Session 19. Micro- and Nanostructures Characterization II
Session Chairman: Akira Toriumi,
University of Tokyo , Japan
14.20
O3-25
Photolumenescence from the nanosized Si fabricated by modified PVD process. A.F. Alexandrov 1 , S-K. Koh 2 , E.A. Kralkina 1 , J.H. Lee 2 , N.E. Maslova 1 , V.B. Pavlov 1 , V.P. Savinov 1 , V.Yu. Timoshenko 1 , K.V. Vavilin 1 . 1. Physical faculty of M.V. Lomonosov Moscow State University, Moscow Russia . 2. P&I Corporation, Seoul , S.Korea
14.40
O3-26
Luminescence of the intrinsic and extrinsic defects in hafnia films . A.A   Rastorguev 1 , V.I.   Belyi 1 , T.P.   Smirnova, L.V.   Yakovkina 1 , V.A.   Gritsenko 2 , M.V.   Zamorynskaya 3 , H.   Wong 4 . 1. Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk , Russia . 2.  Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 3. Ioffe Physicotechnical Institute, RAS, St. Petersburg , Russia . 4.   Electronic Engineering Department, City University of Hong Kong
15.00
O3-27
Chemical Vapor Deposition and characterization of HfO 2 /Si composition. T.P. Smirnova 1 , F.A. Kuznetsov 1 , V.V. Kaichev 2 , S.A.  Beloshapkin 3 , V.I. Kosyakov 1 , L.V. Yakovkina 1 , M.S. Lebedev 1 . 1. Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk , Russia . 2. Boreskov Institute of Catalysis, SB RAS, Novosibirsk , Russia . 3 . Materials and Surface Science Institute, Limerick , Ireland
15.20
O3-28
Falling down capacitance impedance under light illumination of MDS-structures with three-layer SiN x dielectrics. S.A.   Arzhannikova 1, a , M.D.   Efremov 1,b , A.A.   Voschenkov 1 , V.A.   Volodin 1 , G.N.   Kamaev 1 , D.V.   Marin 1 , V.S.   Shevchuk 1 S.A.   Kochubei 1 , A.A.   Popov 2 , Yu.A.   Minakov 2 . 1.  Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia 2.  Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
15.40
O3-29
Al x GaN\GaN structure diagnostic by C-V characteristics method. K.L. Enisherlova, I.B. Gulyaev, V.G. Goryachev, A.U. Dorofeev, E.M. Temper, N.B. Gladisheva. Federal state unitary enterprise Science &Production enterprise Pulsar, Moscow , Russia
16.00
O3-30
CVD Diamond with Electron Conductivity. The New Data on f.c.c. Carbon. M . B .  Guseva , V . G .  Babaev , V . V .  Khvostov , I . Yu .  Koniashin , Yu . A .   Korobov , N . D .  Novikov . Department of Physics, M.V.   Lomonosov Moscow State University , Moscow , Russia
16.20
Coffee break
16.30 Entresol.
POSTER SESSION II
Bottom hall.
Exhibition
19.30
Banquet
Friday, October 5th , 2007
9.00
Breakfast
10.00
Departure

 




 




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