The International Conference “Micro- and nanoelectronics – 2009” (ICMNE-2009) with extended Session "Quantum Informatics" will be held during October 5-9, 2009 at the holiday hotel “Lipki” in Zvenigorod, Moscow region, Russia.
It continues the series of International Conferences “ICMNE-2003”,"QI-2004",“ICMNE-2005”, "QI-2005",“ICMNE-2007” and "QI-2007".
FEI Company Instruments and Technologies for Analysis and Modification of Micro- and Nanoelectronic Devices. V. Ya. Shklover. Systems for Microscopy and Analysis, Ltd. Moscow , Russia
16.00
S-02
CARL ZEISS Equipment for micro- & nano- electronics and E-beam Lithography. Alexander Uliyanenkov. Department of CARL ZEISS on SMT in Russia , NIS , and Eastern Europe.
16.30
S-03
New Developments in NT-MDT Microscope Line. V.A. Bykov. NT-MDT Co., Moscow , Zelenograd , Russia.
17.00
S-04
Development of Components for New Generation of Radio-Electronic Modules and Subsystems.A.G. Vasiliev.Federal State Unitary Enterprise SPE "Pulsar".
17.30
S-05
Application of Base Gate Arrays at Development of Equipment. A.N. Saurov, A.N. Denisov, V.V. Konyachin. State Manufacturing Complex “Technological Centre” MIET, Moscow , Russia.
INVITED: Materials Inflation for Nano Devices.H. Ryssel. Fraunhofer Institute of Integrated Systems and Device Technology (IISB), Erlangen , Germany
9.30
L1-2
INVITED: Advanced silicon-based micro- and nanoelectronics: physics and technology.A.L.Aseev and I.G.Neizvestny. Institute of Semiconductor Physics SD RAS, Novosibirsk , Russia
10.10
L1-2D
Ultra Shallow Junction formation by Plasma Doping Technologies.Hiroyuki Ito. UJT Lab. Inc. , Osaka, Japan.
10.40
L1-3
INVITED:Quantum description of nanotransistors.Vladimir F. Lukichev. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
11.10
L1-4
INVITED:Microelectronics Below 10 nm: Prospects and Problems.Konstantin K. Likharev. Stony Brook University, Stony Brook , NY 11794-3800 , U.S.A
11.40 - 12.00
Coffee break. Winter garden
Conference Hall
Session 1. Sub-100 nm Lithography
12.00
O1-01
Research activity in the field of projection EUV-Lithography within the framework of the Russian program. S.V. Gaponov, E.B. Kluenkov, A.Ya. Lopatin, V.I. Luchin, N.N. Salashchenko, N.I. Chkhalo. Institute for Physics of Microstructures RAS, 603600, GSP-105, Nizhny Novgorod , Russia
12.30
O1-02
Concept of EUV-lithography tool for scientific application. R. P. Seisyan, N. A. Kaliteevskaya, S. G. Kalmykov. A. F. Ioffe Physico-Technical Institute of the Russian Academy of Science, St. Petersburg , Russia
12.50
O1-03
Inorganic thin films as potential photoresist in VUV and EUV ranges . N.A. Kaliteevskaya, S.I. Nesterov, R.P. Seisyan. A.F. Ioffe Physico-Technical Institute of the Russian Academy of Science, St. Petersburg , Russia
13.10
O1-04
Sources of radiations on the basis of capillary discharges. V.A. Burtsev, E.P. Bolshakov, Í . Â . Kalinin, V.A. Kubasov, R.F. Kurunov, V.G. Smirnov, V.I. Chernobrovin. Efremov Scientific Research Institute of Electrophysical Apparatus , St. Petersburg
13.30 - 14.30
Lunch
Conference Hall
Session 2. Nanodevices and Nanostructures I
14.30
L1-5
INVITED:SOI nanotransistors: ultimate dimensions and fundamental limits.V. Popov. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia.
15.00
O1-05
Poly-Si and FUSI gate electrodes on HfO 2 high-k gate dielectrics: in-situ characterization of growth, thermal stability and electronic structure A. Zenkevich 1 , Yu.Yu. Lebedinskii 1 , E.P. Gusev 2 , M. Gribelyuk 3 and V.N. Nevolin 1 1. Moscow Engineering Physics Institute, Russia ,2. IBM Semiconductor Research and Development Center , New York , USA , 3. IBM Systems and Technology Division (Microelectronics Group), Hopewell Junction , NY 12533 , USA
15.30
O1-06
Quantum simulation of a silicon field-effect transistor. V. Vyurkov, A. Sidorov, and A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
15.50
O1-07
Spin relaxation of holes in Ge quantum dots. A. F. Zinovieva, A. V. Nenashev, A. V. Dvurechenskii. Institute of Semiconductor Physics, RAS, Novosibirsk , Russia
16.10
O1-08
Heterostructures with the modulated conductivity. V. Gergel 1 , V. Kurbatov 2 , M. Rzaev 2 , A. Pogosov 2 , N. Sibeldin 2 , T. Burbaev 2 , M. Yakupov 1 . 1. Institute for Radio-Engineering and Electronics, Russian Academy of Science , Moscow , Russia , 2. P.N. Lebedev Physical Institute, Russian Academy of Science , Moscow , Russia
Room A.
Session 3. MEMS & Sensors
14.30
O1-09
High-Speed bistable MEMS commutators. E.G. Kostsov, A.A. Kolesnikov. Institute of Automation and Electrometry, Russian Academy of Sciences , Novosibirsk, Russia
14.50
O1-10
Probe metrology of MEMS-structures. N. Balan 1 , S. Gavrin 2 , A. Gruzdev 2 , S. Morozov 2 1. Angstrem Center Nanotech, Moscow , Russia 2. Moscow Engineering Physics Institute ( State University ) , Moscow , Russia
15.10
O1-11
Analysis of Microelectromechanical Gyroscope Technological Faults. B. Konoplev, I. Lysenko. Taganrog State University of Radio-Engineering, Taganrog, Russia
The development of simulation approach for the modeling of the piezoresistive effect in microsystems engineering elements. T. Kroupkina , O. Pankratov , A. Pogalov. Moscow Institute of Electronic Engineering, Moscow , Russia
16.10
O1-13D
Mems Development in Russia . Petr P. Maltsev. Chief Editor of “ NANO – and MYCROSYSTEMS TECHNIQUES” Magazine, Moscow , Russia.
Room B.
Session 4.
Photonics and Optoelectronics
14.30
O1-14
From diffraction grating to photonic crystal: opaque bands formation. M. Barabanenkov * , Yu. Barabanenkov, S. Nikitov. * Institute of Microelectronics Technology and superpure materials, RAS, Chernogolovka, Russia, Institute of Radioengineering and Electronics, RAS, Moscow, Russia
14.50
O1-15
Formation of two-dimensional photonic crystals by deep anodic etching. E. Yu. Gavrilin, V. V . Starkov, A. F. Vyatkin, and M. A. Knyazev. Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia
15.10
O1-16
Formation of near-field optical vortexes at nanostructured metallic films A. A. Ezhov, S. A. Magnitskii, N. S. Maslova, D. A. Muzychenko, A. A. Nikulin, V.I. Panov. Faculty of Physics of M.V. Lomonosov Moscow State University , Moscow , Russia
15.30
O1-17
Microstructured Optical Fibers – New Tool For Telecommunications. M. Ryabko * , Yu. Chamorovskii, I. Lissenkov, S. Nikitov Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009 Moscow , Russia
15.50
O1-18
Optical properties of empty and filled hollow pin structures. M. Barabanenkov, V. Starkov. Institute of Microelectronics Technology and high-pure materials, Russian Academy of Sciences , Chernogolovka , Russia
16.10
O1-19
The growth features of epitaxial Pb 1-X Mn X Se films and photosensitive p-n junctions on their basis. I.R. Nuriyev, A.M. Nazarov, R.M. Sadygov, M.B. Gadzhiev Institute of Physics of the National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
16.30 - 17.00
Coffee break. Winter garden
Conference Hall Session 5. Devices and ICs
17.00
O1-20
X-band SPDT Switch MMIC based on directional coupler key. V.G. Mokerov, D.L. Gnatyuk, A.P. Lisitskii. Institute of UHF Semiconductor Electronics, Russian Academy of Sciences , Moscow , Russia
17.20
O1-21
Integrated logic elements based on tunneling connected quantum wells. B. Konoplev 1,2 , E. Ryndin 2 . 1. Taganrog State University of Radio Engineering, Taganrog , Russia . 2. Laboratory of Nanoelectronics, South Scientific Center of Russian Academy of Science , Taganrog , Russia
17.40
O1-22
The elementary adiabatic logic gates for digital information processing systems. V. Staroselsky 1 , V. Losev 1 1. Moscow State Institute of Electrinic Engenering, Moscow , Russia
18.00
O1-23
Si-electrode of a fuel cells in the integral design V. Starkov, S. Shapoval. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
18.20
O1-24
An automatic synthesis method of compact models of integrated circuit devices based on equivalent circuits. I.I. Abramov. Belarusian State University of Informatics and Radioelectronics, Minsk , Belarus
18.40
O1-24D
Non-volatile electrically reprogrammable memory on self-forming conducting nanostructures. V. Mordvintsev, S. Kudryavtsev , V. Levin. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia.
Room A.
Session 6.
Thin Films
17.00
O1-25
Morphology and structure of PZT films. M. V. Silibin, V. M. Roshin, V. B. Yakovlev, M. S. Lovygina. Moscow Institute of Electronic Technologies ( Technical University ), 124498 Moscow , Zelenograd , Russia
17.20
O1-26
Degradation kinetics of ALD grown HfO 2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS. Yu.Yu. Lebedinskii 1 , A. Zenkevich 1, N. Barantsev 1 , G. Scarel 2 , M. Fanciulli 2 and V.N. Nevolin 1 . 1. Moscow Engineering Physics Institute, Russia . 2. N ational Laboratory”Materials and Devices for Microelectronics”, INFM/CNR, Italy
17.40
O1-27
The analogy of models of solid-phase epitaxial growth and atomic rearrangement at misfit strain relaxation i n epitaxial heterostructures. Vyatkin A. F. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
18.00
O1-28
Formation of Conductive Structures in Insulate Layers by Selective Removal of Atoms technique. B. Gurovich 1 , A. Domantovsky 1 , E. Kuleshova 1 , E. Ol'shansky 1 , K. Prikhodko 1 , Y. Lunin 2 . 1. Russian Research Center “Kurchatov Institute”, Moscow, Russia 2. Institute for System Studies, Russian Academy of Sciences, Moscow, Russia
18.20
O1-29
Effects of negative differential resistance in TlIn 1-x Gd x Se 2 films. E.M. Gojaev, A.M. Nazarov*, K.Dj. Gulmammadov, S.S. Osmanova. Azerbaijan Technical University , Baku , Azerbaijan . * Institute of Physics of the National Academy of Sciences of Azerbaijan , Baku , Azerbaijan
Room B.
Session 7.
Superconducting Structures
17.00
L1-6
INVITED:Josephson junctions with ferromagnetic materials. M. Yu. Kupriyanov 1 , A.A. Golubov 2 . Institute of Nuclear Physics , Moscow State University , Moscow , Russia . 2. Faculty of Science and Technology, University of Twente , The Netherlands
17.30
O1-30
Nonequlibrium properties of SIS'IS structure under microwave irradiation. A.V. Semenov 1 , I.A. Devyatov 2 , M.Yu. Kupriyanov 2 . 1. Department of Physics, Moscow State Pedagogical University, Moscow , Russia . 2. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University , Moscow , Russia
17.50
O1-31
Out-of substrate plane orientation control of thin YBa 2 Cu 3 O x films on NdGaO 3 tilted-axes substrates. Peter B. Mozhaev 1 , Julia E. Mozhaeva 1 , Jorn B. Hansen 2 , Claus S. Jacobsen 2 , Igor K. Bdikin 3 , Iosif M. Kotelyanskii 4 , Valery A. Lusanov 4 , Andrey L. Kholkin 3 . 1. Institute of Physics and Technology RAS, Moscow , Russia 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark .3. CICECO, University of Aveiro , Aveiro , Portugal 4. Institute of Radio Engineering and Electronics RAS, Moscow , Russia
18.10
O1-32
Calibration of quantum detector of noise based on a system of asymmetric superconducting loops. V.L. Gurtovoi, S.V. Dubonos, A.V. Nikulov, N.N. Osipov and V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia
18.30
O1-32D
Nonuniform magnetic field of ferromagnetic nanoparticle as source for
control transport properties of superconductor structures.A.A. Fraerman1,
B.A. Gribkov1, S.A. Gusev1, E. Il'ichev2, A.Yu. Klimov1, Yu.N. Nozdrin1,
G.L. Pakhomov1, V.V. Rogov1, R. Stolz2, D. Y. Vodolazov1 and S.N. Vdovichev1
1. Institute for Physics of Microstructures RAS, GSP 105, 603950 Nizhny
Novgorod, Russia, 2. Institute for Physical High Technology, Jena, Germany.
19.00
Dinner
Wednesday, October 5th 2005
8.15
Breakfast
Conference Hall SYMPOSIUM QI-2005
9.00
Q-01
K.A.Valiev (FTIAN) Introductory remarks. Review of quantum informatics: results and perspectives
9.30
Q-02
V.Akulin (Univ. Orsay, invited) Entanglement distribution along 2-dimensional lattice of qubits
10.00
Q-03
A.S.Holevo (MIAN, invited), Photon localisation: observed location and uncertainty relations
10.30
Coffee break
Conference Hall Session 8. Nanodevices and Nanostructures II
10.50
O2-01
Electronic transport through silicon nanocrystals embedded in SiO 2 matrix. M.D. Efremov, S.A. Arzhannikova, G.N. Kamaev, G.A. Kachurin, A.V. Kretinin, V.V. Malutina?Bronskaya, D.V. Marin, V.A. Volodin, S.G. Yanovskaya. Institute of Semiconductor Physics, RAS , Novosibirsk , Russia
11.10
O2-02
Calculation of the secondary charge carriers current in submicron channel MOSFETs at stress regimes of operation. V.M. Borzdov, F.F. Komarov, O.G. Zhevnyak, V.O. Galenchik, D.V. Pozdnyakov, A.V. Borzdov. Belarus State University , Minsk , Belarus
11.30
O2-03
Novell flash devices based on high-k dielectrics. V.A. Gritsenko, K. A. Nasyrov. Institute of Semiconductor Physics, Novosibirsk
11.50
O2-04
Formation of silicon-on-insulator structures with low surface roughness. F. Komarov, O. Milchanin, E. Boiko . Institute of Applied Physics Problems, Belarusian State University , Minsk , Belarus
12.10
O2-05
Hopping conductivity as a predominant mechanism of current transport in thermally oxidized nanoporous silicon. L.V. Grigoryev 1 , I.M. Grigoriev 1 , V. Zamoryanskaya 2 , A.E. Kalmykov 2 , V.I. Sokolov 2 , L.M. Sorokin 2 . 1. V.A.Fock Institute of Physics, Saint-Petersburg State University , Russia 2. A.F.Ioffe Physico-Technical Institute, Saint-Petersburg , Russia
12.30
O2-06
Transport phenomena in interference transistor. A.A. Gorbatsevich 1 , V.V. Kapaev 2 . 1. Moscow Institute of Electronic Technology ( Technical University ), Moscow , Russia 2. P.N. Lebedev Physical Institute, Moscow , Russia.
Room A. SYMPOSIUM QI-2005
11.00
Q-04
L.E.Fedichkin (Clarkson University, invited), Decoherence models for spin ensembles
11.30
Q-05
S.Ya.Kilin (Inst.Physics, Minsk, invited), To be determined
12.00
Q-06
A.Khrennikov (Univ.Vaxio, Sweden, invited), Quantum mechanics as projection of classical statistical mechanics
12.30
Q-07
M.Mensky (FIAN), Quantum-computer toy model of consciousness according to the extended Everett conception
Room B.
Session 9. Magnetic Micro- and Nanostructures
11.00
O2-07
Sd-exchange switching in magnetic junctions having non-pinned current carrier spins . E.M. Epshtein, Yu.V. Gulyaev, P.E. Zilberman. Institute of Radio Engineering and Electronics of RAS, Fryazino , Russia
11.20
O2-08
Moessbauer spectra of nanomagnets within rotating hyperfine field. N. P. Aksenova , M. A. Chuev. Institute of Physics and Technology , RAS, Moscow , Russia
11.40
O2-09
Magnetoresistance Of Coupled Quantum Wells In Quantizing Magnetic Field. V.E. Kaminskii 1 , G.B. Galiev 1 , V.G. Mokerov 1 , I.S. Vasil'evskii 2 , R.A. Lunin 2 , V.A. Kul'bachinskii 2 . 1 Institute of UHF Semiconductor Electronics, Russian Academy of Sciences , Moscow . 2 Moscow State University, Department of Low Temperature Physics, Moscow , Russia
12.00
O2-10
Two-Dimensional Magnonic Crystals Based on Ferromagnetic Films. Yu.A. Filimonov 1 , Yu.V. Gulyaev , S.A. Nikitov * , S.V. Vysotskii 1 . Institute of Radioengineering and Electronics, Russian Academy of Sciences, Moscow, Russia 1 Institute of Radioengineering and Electronics, Russian Academy of Sciences, Saratov Branch, Russia
12.20
O2-11
Exchange interactions in a ferrimagnetic ring. V. Kostyuchenko 1 , M. Kostyuchenko 2 . Institute of Microelectronics and Infirmatics, Russian Academy of Sciences , Yaroslavl , Russia . 2. Yaroslavl State Technical University , Yaroslavl , Russia
12.40
O2-11D
MFM tip induced remagnetization effects in ferromagnetic sub-micron sized
particles.B.A.Gribkov, S.A.Gusev, A.A.Fraerman, I.R.Karetnikova,
V.L.Mironov, I.M.Nefedov, N.I.Polushkin, I.A.Shereshevsky, S.N.Vdovichev.
Institute for Physics of Microstructures, Russian Academy of Sciences,
Nizhny Novgorod, Russia
13.00
Lunch
Conference Hall Session 10. Plasma Technologies
14.00
O2-12
Precision Plasma Technologies: Equipment and Processes. A.A. Orlikovsky, K.V. Rudenko, S.N. Averkin. Institute of Physics & Technology RAS, (FTIAN), Moscow , Russia
14.20
O2-13
A self-consistent model for the HCl dc glow discharge: plasma parameters and active particles kinetics. A. Efremov, V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo , Russia
14.40
O2-14
Ultra shallow p + -n junctions in Si produced by plasma immersion ion implantation. Ê . Rudenko 1 , S. Averkin 1 , V. Lukichev 1 , A. Orlikovsky 1 , A. Pustovit 2 , A. Vyatkin 2 . 1. Institute of Physics & Technology, RAS, Moscow , Russia . 2. Institute of Microelectronics Technology and High-Purity Materials, RAS, Chernogolovka , Russia
15.00
O2-15
Plasma enhanced chemical vapor deposition of multifunctional nanocrystalline films of silicon carbornitride. Nadezhda I. Fainer*, Yuri M. Rumyantsev, Marina L. Kosinova, Evgeni A. Maximovski, Fedor A. Kuznetsov. Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk , Russia
15.20
O2-16
Ionized PVD with an electron cyclotron resonance plasma source. N. Poluektov, V. Kharchenko, I. Kamyschov, Yu. Tsar'gorodsev. Moscow State Forestry University , Mytischi, Moscow Region , Russia
15.40
O2-17
Simulation of the feature profile evolution in during deep plasma etching of Si by the cell-string hybrid method. A.S. Shumulov, I.I. Amirov. Institute of Microelectronics and Informatics RAS, Yaroslavl , Russia
Room A. SYMPOSIUM QI-2005
14.00
Q-08
Pavel Kurakin , George Malinetskii , Howard Bloom ( Keldysh Institute of Applied Mathematics , New York University ), Dialogue model of quantum dynamics
14.20
Q-09
F.Ablayev, A.Gainutdinova (Kazan State Univ., Russia), On complexity properties of quantum uniform and nonuniform automata
14.40
Q-10
A.Y.Okulov (FIAN), Quantum billiards with nonlinear boundaries
15.00
Q-11
Yu.I.Bogdanov, R.F.Galeev, S.P.Kulik, G.A.Maslennikov, and E.V.Moreva (MSU), Statistical Reconstruction of Biphoton Polarization States.
15.20
Q-12
S.N.Molotkov, A.V.Timofeev, A.P.Makkaveyev, D.I.Pomozov (IFFT, FTIAN), New algorithms for the key purification in quantum cryptography
INVITED: Actual Problems of Modeling in Micro- and Nanoelectronics. R.V. Goldstein, V.V. Ivin, V.P. Kudrya, T.M. Makhviladze, A.Kh. Minushev, K.P. Novoselov , M.E. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences; JSC SOFT-TEC, Moscow , Russia
14.20
O2-19
Complex simulation of electron process of deep submicron MOSFET based on energy balance equation. V.A. Gergel 1 , M.N. Yakupov 2 . 1. The Institute for Radio-Engineering and Electronics, RAS, Moscow . 2. JSC Mikron, Zelenograd , Russia
14.40
O2-20
Nonequilibrium Diagrammatic Technique for Nanoscale Devices. G. I. Zebrev. Department of Microelectronics, Moscow Engineering Physics Institute, Russia
15.00
O2-21
Monte Carlo simulation of device structures with one-dimensional electron gas. V.M. Borzdov, F.F. Komarov, V.O. Galenchik, D.V. Pozdnyakov, A.V. Borzdov, O.G. Zhevnyak. Belarus State University , Minsk , Belarus
15.20
O2-22
Process and device simulation: problems of effective use for microelectronics and microsystems engineering products design. Y. Chaplygin, M. Korolev, T. Kroupkina. Moscow Institute of Electronic Engineering, Moscow , Russia
15.40
O2-23
Modeling of spin polarization in InAs/GaSb quantum wells under a longitudinal current. A. Zakharova 1 , I. Lapushkin 1 , S.T. Yen 2 , K. Nilsson 3 , K.A. Chao 3 . 1. Institute of Physics and Technology of RAS, Russia ; 2. Department of Electronics Engineering, National Chiao Tung University , Taiwan ; 3. FTT, Department of Physics, Lund University , Sweden
16.10
Coffee break
16.30 Entresol. POSTER SESSION I
Bottom hall.
Exhibition
19.00
Dinner
Thursday, October6 th 2005
8.15
Breakfast
Conference Hall Session 12. Nanostructures Technologies I
9.00
L3-7
INVITED:NANOFAB: The base, multipurpose, research and technological complex . V.A. Bykov , D.V. Veryovkin , NT-MDT Co, State Research Institute of Physical Problems, 124460, Moscow, Russia
9.30
O3-01
Silicon Nanoclusters in SiN x Matrix: Formation by LF PECVD and Properties. A.E. Berdnikov 1 , A.A. Popov 1 , V.D. Chernomordick 1 , M.D. Efremov 2 , V.A. Volodin 2 , D.V. Marin 2 , N.V. Vishnyakov 3 , I.G. Utochkin 3 . 1. Institute of Microelectronics and Informatics Russian Academy of Sciences, Yaroslavl , Russia . 2. Institute of Semiconductors Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk , Russia . 3 Ryazan state radiotechnical academy, Ryazan , Russia
9.50
O3-02
Formation of ordered arrays of Ag nanowires and nanodots on Si(557) surface. R. Zhachuk, S. Teys, A. Dolbak, B. Olshanetsky. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia
10.10
O3-03
Synthesis of nanowires by pulsed current electrodeposition. A. N. Belov, S. A. Gavrilov. Moscow Institute of Electronic Technologies ( Technical University ), 124498 Moscow , Zelenograd , Russia
10.30
O3-04
The relationship between magnetoresistance and magnetomechanical effects in electrodeposited nickel nanocontacts. A. Bukharaev, P. Borodin, D. Biziaev, R. Gatiiatov. Zavoisky Physical Technical Institute of Russian Academy of Sciences, Kazan , Russia
Room A. SYMPOSIUM QI-2005
9.00
Q-14
V.V.Aristov, A.V.Nikulov (Inst., microelectronics techn.) Could EPR correlation be in superconducting structures
9.20
Q-15
I.I.Ryabtsev, D.B.Tretyakov, I.I.Beterov, V.M.Entin (Institute of Semiconductor Physics ), Application of Rydberg atoms to quantum computing
9.40
Q-16
G.Yu. Kryuchkyan and H.H. Adamyan (Yerevan State Univ.), Non-stationary entanglement and squeezing beyond the standard limits
10.00
Q-17
A. Kalachev, V. Samartsev (Kazan Physical-Technical Institute) Quantum storage and quantum calculations using subradiant states of atomic ensembles
10.20
Q-18
Yu.I. Bogdanov (FTIAN), Quantum tomography of arbitrary spin states of particles: root approach
10.40
Q-19
A.A.Kokin (FTIAN), The antiferromagmet-based nuclear spin quantum register in inhomogeneous magnetic field
Room B. Room B. Session 13. Simulation and Modeling II
9.00
O3-05
Modeling of diffusion of As i mplanted in Si at low energies and high fluences. F.F. Komarov 1 , O.I. Velichko 2 , A.M. Mironov 1 , V.A. Tsurko 3 , G.M. Zayats 3 . 1. Institute of Applied Physics Problems, Belarusian State University , Minsk , Belarus , 2. Belarusian State University on Informatics and Radioelectronics, Minsk , Belarus 3. Institute of Mathematics , Academy of Sciences of Belarus , Minsk , Belarus
9.20
O3-06
Atomic mechanisms of cluster diffusion on metal surface. O.S. Trushin 1 , P. Vikulov 1 , V.V. Naumov 1 , A. Karim 2 , A. Kara 2 and T. Rahman 2 . 1. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia , 2. Kansas State University , Manhattan , KS , USA
9.40
O3-07
Possibility of non-equilibrium phase transitions in the atmosphere of own silicon defects . E.P. Svetlov-Prokop'ev 1 , S.P. Timoshenkov 2 , V.V. Dyagilev 2 , V.V. Kalugin 2 . 1. State Scientific Center RF Institute for Theoretical and Experimental Physics, Moscow , Russia 2. Moscow Institute of Electronics Technology ( Technical University ), Moscow , Russia
10.00
O3-08
Melting behavior of metals in matrix of porous anodic alumina. A. N. Belov 1 , S. A. Gavrilov 1 , D. A. Kravchenko 1 , D. G. Gromov 1 , A. S. Malkova 1 , A. A. Tikhomirov 2 . 1. Moscow Institute of Electronic Technologies ( Technical University ), Zelenograd , Russia , 2. NT-MDT Corporation,, Zelenograd , Russia
10.20
O3-09
On the Surface Pressure and the Fragmentation of a Nanocrystal. M.N. Magomedov. Institute for Geothermal Research of Daghestan S cientific Centre RAS , Makhachkala , Russia
11.00
Coffee break
Conference Hall Session 14. Nanostructures Technologies II
11.30
O3-10
Prospects of Semiconductor Vacuum Technologies in Space. V.V. Blinov 1 , A.I. Nikiforov, O.P. Pchelyakov 1 , L.V. Sokolov 1 , A.I. Ivanov 2 , I.V. Tchurilo 2 , V.V. Teslenko 2 , L.L. Zvorykin 2 . 1. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 2. Rocket Space Corporation "Energiya", Korolev , Russia
11.50
O3-11
Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on SiO 2 films. A.V. Dvurechenskii 1 , P.L. Novikov 1 , Y. Khang 2 , Zh.V. Smagina 1 , V.A. Armbrister 1 , A.K. Gutakovskii 1 . 1. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia , 2. Samsung Electronics Co, Samsung Advanced Institute of Technology , Yongin-Si , Korea
12.10
O3-12
Diffusion and phase formation in ternary silicate systems framed by an ion bombardment . S. Krivelevich, E. Buchin, Yu. Denisenko, R. Selukov. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia
12.30
O3-13
Forming Matrix Nanostructures in Silicon . A.V. Barkhudarov 1 , S.A. Gavrilov 1 , A.A. Golishnikov 2 , M.G. Putrya 1 . 1. Mosc ow Institute of Electronic Technology (MIET), Zelenograd , Russia 2. SMC “Technological Center” MIET, Zelenograd, Russia
12.50
O3-14
The combined electromagnetic mirror as the probable breakthrough tool in electron and ion nanotechnology. V. A. Zhukov 1 , A. V. Zavyalova 2 . 1. .Institute for Informatics and Automation, Russian Academy of Sciences, Saint-Petersburg, Russia . 2. Vavilov State Optical Institute, Saint-Petersburg , Russia
Room A. SYMPOSIUM QI-2005
11.30
Q-20
V.L. Kurochkin, I.I.Ryabtsev, A.V.Zverev, V.K.Ovchar, I.G.Neizvestny, S.Moon, B.S.Bae, H.J.Shin, J.B.Park, C.W.Par k (Inst. semiconductor physics, Korea inst science technology), Experimental setup for long-distance quantum cryptography via optical fiber lines
11.50
Q-21
M. Kutcherov ( Krasnoyarsk State Technical University ), Thermal entanglement in a case of two spin temperatures
12.10
Q-22
S.N. Dîbryakov , V.V.Privezentsev (N.N.Semenov Institute of chemical physics , FTIAN), Simulation of EPR spectra of the singlet and triplet states of zinc-phosphorus two-spin system in silicon
12.30
Q-23
H. Thapliyal, M.B.Srinivaz (Int.Inst.informational technology, Hyderabad), Novel reversible TSG gate and its applications for designing components of primitive reversible/quantum ALU
Room B. Session 15. Micro- and Nanostructures Characterization I
11.30
O3-15
Low frequency current noise spectroscopy as a tool to study disordered materials . M.I. Makoviychuk 1 , A.L. Chapkevich 2 , E.O. Parshin 1 . 1. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia 2. Moscow Committee of Science and Technologies, Moscow , Russia
11.50
O3-16
Compensation Technique in Scanning Capacitance Microscopy. V. V. Polyakov 1 , I. V. Myagkov 2 , G. A. Tregubov 2 , An. V. Bykov 3 . 1. Moscow Institute of Physics and Technology , Russia . 2. State Research Institute for Physical Problems, Moscow , Russia . 3. NT-MDT Company, Moscow , Russia
12.10
O3-17
Simultaneous fitting of several X-ray rocking curves from different crystallographic planes of multilayer heterostructures. M. A. Chuev 1 , A. A. Lomov 2 , R. M. Imamov 2 , I. A. Ivanov 1 . 1. Institute of Physics and Technology , Russian Academy of Sciences, 117218 Moscow , Russia 2. A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences , Moscow , Russia
12.30
O3-18
Poly- and nanocrystalline diamond films: optical, electrical and thermal properties. V. G. Ralchenko 1 , A. F. Popovich 1 , A.V. Saveliev 1 , I.I. Vlasov 1 , A.V. Khomich 2 , V.I. Kovalev 2 , G.V. Chucheva 2 , A.D. Bozhko 3 , M.V. Chukichev 3 , A.G. Kazanskyi 3 , F.X. Lu 4 , W.M. Mao 4 , G.C. Chen 4 . 1. General Physics Institute, Russian Academy of Sciences , Moscow , Russia . 2. Institute of Radiotechnics and Electronics, Russian Academy of Sciences , Fryazino , Russia . 3. M.V.Lomonosov Moscow State University , Department of Physics , Russia 4. School of Materials Science and Engineering University of Science and Technology Beijing , P.R. China
13.30
Lunch
Conference Hall Session 16. Micro- and Nanostructures Characterization II
14.20
O3-19
Linear Sizes Measurements of Relief Elements with the Width Less Than 100 nm on a SEM. Yu.A. Novikov 1 , A.V. Rakov 1 , P.A. Todua 2 . 1. General Physics Institute, Russian Academy of Science , Moscow , Russia . 2. Center for Surface and Vacuum Research, Moscow , Russia
14.40
O3-20
Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface. L.K. Orlov, Zs. Horvath**, A.S. Lonchakov*, M.L. Orlov. IPM RAS, Nizhny Novgorod, * ) IMP UrB RAS, Ekaterinburg , Russia ; ** ) RITP&MS, HAS, Budapest , Hungar y
15.00
O3-21
Spectroscopic ellipsometry based on binary modulation polarization. V.I. Kovalev, A.I. Rukovishnikov. Institute of Radio Eng. & Electronics, Russian Academy of Sciences, Fryazino, Russia
15.20
O3-22
Analysis of functionalities basic modes in Atomic Force Microscopy. S. Krasnoborodko, V. Shevyakov, A. Tihomirov. Moscow Institute of Electronic Equipment ( Technical University ), Zelenograd , Russia
15.40
O3-23
Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods. N. Yarykin 1 , R. Zhang 2 , G. Rozgonyi 2 . 1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia, 2.Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, USA
16.00
O3-24
Structural and nonlinear-optical studies of ultrathin Si/SiO 2 multiple quantum wells. A.A. Lomov 1 , A.G. Sutyrin 1 , D. Yu. Prohorov 1 , F.A. Pudonin 2 , T.V. Dolgova 3 , A.A. Fedyanin 3 , and O.A. Aktsiperov 3 . 1. Institute of Crystallography of RAS, Moscow , Russia . 2. Lebedev Physical Institute of RAS, Moscow , Russia 3.Department of Physics, Moscow State University , Russia
Room A. SYMPOSIUM QI-2005
14.20
Q-24
A.Yu. Bogdanov, Yu.I. Bogdanov, K.A. Valiev (FTIAN), Analysis of localized Schmidt decomposition modes and of entanglement in atomic and optical quantum systems with continuous variables
14.40
Q-25
V.P.Gerdt, V.Severianov (JINR) An algorithm for constructing polynomial systems whose solution space sharacterizes quantum circuits
15.00
Q-26
A.Mandilara (Washington University), Description of entanglement with nilpotents polynomials
15.20
Q-27
V. Vyurkov, L. Gorelik, and A.Orlikovsky (FTIAN, Chalmers Univ.), Measurement of a spin qubit array with a quantum wire
15.40
Q-28
V. Vyurkov, I. Semenikhin, L.Fedichkin, and A. Khomyakov (FTIAN, Clarkson Univ.) Effect of image forces on a charge qubit operation
16.00
Q-29
A.Tsukanov (FTIAN), To be deternimed
Room B. Session 17. Defects and Impurities in Semiconductors
14.20
O3-25
Low-temperature atomic hydrogen annealing of ion-implanted Si layers. V. Kagadei 1 , E. Nefyodtsev 2 , R. Groetzschel 3 , S. Romanenko 2 , A. Markov 2 . 1. Research Institute of Semiconductor Devices, Tomsk , Russia 2. Institute of High Current Electronics , Russian Academy of Sciences , Tomsk , Russia 3. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, Dresden , Germany
14.40
O3-26
Determination of oxygen and carbon in silicon monocrystals by radiative-luminescent method. A.V. Yukhnevich. Research Institute for Physico-Chemical Problems of Belarussian State University , Minsk , Belarus
15.00
O3-27
Impurity-defect interaction at the Yb + implanted silicon annealing. D.I. Brinkevich, V.S. Prosolovich and Yu.N. Yankovski. Belorussian State University , Minsk , Belarus
15.20
O3-28
Characteristics of the implant-isolated GaAs layers after annealing. F.F. Komarov 1 , A.M. Mironov 1 , P. Zukowski 2 . 1. Belarussian State University , Minsk , Belarus , 2. Lublin University of Technology , Lublin , Poland
