The International Conference “Micro- and nanoelectronics – 2009” (ICMNE-2009) with extended Session "Quantum Informatics" will be held during October 5-9, 2009 at the holiday hotel “Lipki” in Zvenigorod, Moscow region, Russia.
It continues the series of International Conferences “ICMNE-2003”,"QI-2004",“ICMNE-2005”, "QI-2005",“ICMNE-2007” and "QI-2007".
Chair: E. Velikhov, Russian Scientific Center “Kurchatov Institute”, Moscow, Russia Co-chair: K. Valiev, Institute of Physics and Technology (IPT), Russian Academy of Sciences (RAS), Moscow, Russia Members:
A. Aseev, Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia D. Averin. Stony Brook University, USA M. Baklanov, IMEC, Belgium.
V. Benine, ASML, Netherlands
F. Briones, Instituto de Microelectro’nica de Madrid, Centro Nacional de Microelectro’nica-CSIC, Spain
R. Chabicovsky, Technical University, Vienna, Austria
Yu. Gulyaev, Institute of Radioelectronics, RAS, Russia
H.-L. Hwang, National Tsing Hua University,Taiwan K. Novoselov. University of Manchester, Manchester , UK F. Kuznetsov, Institute of Inorganic Chemistry, RAS, Siberian branch, Novosibirsk
V. Labunov, Belorussian State University of Informatics and Radioelectronics (BSUIRE), Minsk, Belorussia
K. Lal. National Physical Lab., India. K. Likharev. Stony Brook University, Stony Brook , NY 11794-3800 , USA V. Litovchenko, Institute of Semiconductor Physics (ISP) of National Ukrainian Academy of Sciences (NUAS), Kiev, Ukraine
J. Nishizawa, Semiconductor Research Institute, Japan
Yu. Pozhela, Institute of Semiconductor Physics, Vilnyus, Lithuania
I.Rangelow, University of Ilmenau, Germany
C.N.R. Rao, Jawaharlal Nehru Centre for Advanced Scientific Research, India
H. Ryssel, Fraunhofer Institute of Integrated Systems and Devices Technology, Erlangen, Germany
A. Schlachetzki, Technical University, Braunschweig, Germany
Th. Skotnicki. ST Microelectronics, Crolles , France
D. Toma. Tokyo Electron Corp., U.S. Technology Development Center, USA
A. Toriumi. University of Tokyo , Japan
R. Suris, Ioffe Institute, S.-Peterburg
Program Committee
Chair: K. Valiev, Institute of Physics and Technology (IPT), Russian Academy of Sciences(RAS), Moscow, Russia Co-chair: A. Orlikovsky, IPT RAS, Moscow, Russia Co-chair: I. Neizvestnyi, Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia Members:
A. Alexandrov, Lomonosov Moscow State University, Russia
V. Aristov, Institute of Microelectronics Technology and High-Pure Materials, RAS, Chernogolovka, Russia
A. Berdnikov, Yaroslavl’ branch of IPT RAS, Yaroslavl, Russia
V. Betelin, Scientific Institute of System Research, RAS, Moscow, Russia
Yu. Chaplygin, Moscow Institute of Electronic Technology (TU), Zelenograd, Russia
B. Gribov, State Scientific Institute of Ultra-Pure Materials, Zelenograd
F. Komarov. Institute of Appl.Phys. Problems, Minsk, Belorussia
P. Kop’ev, Ioffe Institute, S.-Peterburg, Russia
Yu. Kopaev, Lebedev Institute of Physics, RAS, Moscow, Russia
V. Lukichev IPT RAS, Moscow, Russia
Yu. Ozhigov, Lomonosov Moscow State University, Russia
P. Todua. MPTI, Moscow, Russia
G. Krasnikov. Mikron Co., Zelenograd, , Russia
V. Panchenko. Institute of Laser and Informatics Technologies Problems, RAS, Schatura, Russia
K. Salikhov. Zavoiskiy Physical-Technical Institute, RAS, Kasan, Russia
A. Sigov. Moscow State Institute of Radioengineering, Electronics and Automation (TU), Russia
N. Salaschenko. Institute of Microstructures Physics, RAS, Nizhnii Novgorod, Russia
A. Sukhoparov, Angstrem Co, Zelenograd, Russia
Organizing Committee
Chair: A. Orlikovsky, IPT RAS, Russia Co-chair: V. Lukichev IPT RAS, Russia Members:
I. Abramov. BSUIRE , Minsk, Belorussia
Yu. Bogdanov, IPT RAS, Russia
V. Borisenko. Belorussian State University of Informatics and Radioelectronics (BSUIRE), Minsk, Belorussia
A. Buharaev. Zavoiskiy Physical-Technical Institute, RAS, Kasan, Russia
A. Berdnikov, Yaroslavl branch of IPT RAS, Yaroslavl
M. Chuev. IPT RAS, Moscow, Russia
A. Gorbazevitch. Moscow Institute of Electronic Technology (TU), Zelenograd
V. Gran’ko. “Integral” Co., Minsk, Belorussia
B. Gurovitch. Russian Scientific Center “Kurchatov Institute”, Moscow, Russia
M. Korolev. Moscow Institute of Electronic Technology (TU), Zelenograd, Russia
S. Nikitov. Institute of Radioelectronics, RAS, Moscow, Russia
O. Pchelyakov. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
A. Rudyi, Yaroslavl State University, Yaroslavl, Russia
V. Rubaev, president of NIX company, Russia
K. Rudenko, IPT RAS, Moscow – Scientific Secretary of ICMNE-2009
A. Vasiliev, “Pulsar”, Moscow, Russia
Local Organizing Committee
Prof. Vladimir Lukichev – Co-chair of Organizing Committee of ICMNE-2009
Prof. Yury Ozhigov - Chair of QI-2009 Sessions
Prof. Yury Bogdanov
Dr. Konstantin Rudenko - Scientific Secretary of ICMNE-2009
Mr. Sergey Skalkin – Financial Administrator of ICMNE-2009
Dr. Vladimir V’yurkov
Dr. Igor Semenikhin
Dipl. Eng. Irina Lukianova
Dipl. Eng. Andrey Myakon’kih
Dipl. Eng. Stanislav Tarasov
Dipl. Eng. Valeriya Sosina
Institute of Physics & Technology (IPT),
Russian Academy of Sciences
Nakhimovsky av., 34, 117218 Moscow, Russia
